HY3215M MOSFET TRANSISTOR 300W 120A TO-247
#23921
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5,80 лв.
HY3215M MOSFET TRANSISTOR 300W 120A TO-247
Описание
Type Designator: HY3215M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 137 nC
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 548 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm