Описание
SMD/SMT
Package/Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 7 A
Rds On - Drain-Source Resistance: 500 mOhms
Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V
Vgs - Gate-Source Voltage: 30 V
Qg - Gate Charge: 15 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 60 W