IPAW60R380CEXKSA1 MOS N-FET 600V 15A 112W 890mOhms TO-220F

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IPAW60R380CEXKSA1 TO-220F

Описание


N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 15 A
Rds On - Drain-Source Resistance: 890 mOhms
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Vgs - Gate-Source Voltage: 20 V
Qg - Gate Charge: 32 nC
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 112 W